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Fet K30a



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K30A
Search -----> 2SK30A
Xiaosheng
1.K30A.pdf (1 pages)

Available stocks

Part Number
Quantity
K30A-GR
TOSHIBA
38 000
K30A-Y
TOSHIBA
189 990
K30A06J3
ST
K30A06J3,4000,TO-220FP,VBSEMI
K30A06J3A,4000,TO-220FP,VBSEMI
K30A06J3A.,33580,TO-220F,VBSEMI
Fet
K30A06N1,5000,TO-220FP,VBSEMI
  • Current page: 1 of 1
LH03 Series of Products interconvert:
Drain to Source cut-off current
Fet
Gate to Drain voltage
Forward transfer admittamce
Reverse transfer capacitance (Common Source)
Marking Symbol
Gate to Source voltage
Allowable power dissipation
Storage Temperature
For charge sensor, meter amplifier circuit, rheostat , chopper and
Silicon Junction FETs
Absolute Maximum Ratings (Ta=25
I
DSS
Runk
2SK30A
Prameter
Room 206 3rd building 195-16 Tianlin RD. Shanghai China
0.3 to 0.75
R
Symbol
V
V
K30a
| Y
I
C
P
GSS
I
GSO
G
iss
Fet K30a
D
j
℃
)
V
I
V
-55 to +125
DS
DS

Fet Kaf

DS
= -100μA，V
= 10V， V
= -30V, V
125
-50
= 10V, I
035E
O
GS
D
= 0V， f = 1MHZ
= 0V， f = 1KHZ
DS
mA
= 0V
℃
V
= 0V
035F
Package example:
Y
XIAOSHENG
-0.4
min
1.2
SOT-23
TO-92
:
2.6
3
2.6 to 6.5
Source
-5.0
6.5
1
GR
G
mS
mA
pF
V

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Part number : K30A

Functions : FET Silicon N Channel Juction Type

Package information : TO-92 Type

Fit 30 App

Manufacturer : Toshiba

Image

Data Sheet Jfet K30a

Functions :

1. Low Noise Pre-Amplifier, Tone Control Amplifier And DC-AC

2. High Input Impedance Amplifier Circuit Applicatins.

Fet K30a

Maximum Ratings ( Ta=25’C )

1. Gate-Drain Voltage : Vgds = -50V

2. Gate Current : Ig = 10 mA

3. Drain Power Dissipation : Pd = 100mW

4. Junction Temperature : Tj = 125’C

5. Storage Temperature Range : Tstg = -55 ~ 125’C

Pinout :

K30A Datasheet PDF

K30a Fet Datasheet Pdf

Other data sheets within the file : 2SK30, 2SK30A, 2SK30ATM

Fet K30a Datasheet

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