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2SK3114 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3114
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 30 W
Предельно допустимое напряжение сток-исток |Uds|: 600 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Максимально допустимый постоянный ток стока |Id|: 4 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 6 ns
Выходная емкость (Cd): 115 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.6 Ohm
Тип корпуса: TO-220
2SK3114 Datasheet (PDF)
D4184 Mosfet Control Module
0.1. 2sk3114b.pdf Size:246K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
0.2. 2sk3114.pdf Size:94K _nec
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3114SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEORDERING INFORMATIONDESCRIPTION The 2SK3114 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3114 Isolated TO-220designed for high voltage applications such as switching powersupply, AC adapter.FEATURES
8.1. 2sk3117.pdf Size:260K _toshiba
2SK3117 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3117 Chopper Regulator DC-DC Converter, and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.21 (typ.) High forward transfer admittance : |Y | = 17 S (typ.) fs Low leakage current : I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode : Vth = 2.0~4.0 V (
8.2. 2sk3119.pdf Size:149K _sanyo
Ordering number:ENN6098AN-Channel Silicon MOSFET2SK3119Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SK3119]4.51.51.60.40.53 2 10.41.53.0 1 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C
8.3. 2sk3116b.pdf Size:265K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
N-mosfet D4184
8.4. 2sk3115b.pdf Size:264K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. 2sk3111.pdf Size:75K _nec
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3111SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3111 is N channel MOS FET device thatPART NUMBER PACKAGEfeatures a low on-state resistance and excellent2SK3111 TO-220ABswitching characteristics, and designed for high voltage2SK3111-S TO-262applications such as DC/DC converter, actuator dr
8.6. 2sk3116.pdf Size:70K _nec
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3116SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION ORDERING INFORMATION The 2SK3116 is N-channel DMOS FET device that features aPART NUMBER PACKAGElow gate charge and excellent switching characteristics, and2SK3116 TO-220ABdesigned for high voltage applications such as switching power2SK3116-S TO-262supply, AC adapter.2SK3116-ZJ TO-
8.7. 2sk3115.pdf Size:69K _nec
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3115SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, anddesigned for high voltage applications such as switching power supply, AC adapter.ORDERING INFORMATIONFEATURES Low gate charge PART NUMBER PACKAGEQG = 2
8.8. 2sk3110.pdf Size:67K _nec
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3110SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONORDERING INFORMATION The 2SK3110 is N channel MOS FET device that features alow on-state resistance and excellent switching characteristics, PART NUMBER PACKAGEand designed for high voltage applications such as DC/DC2SK3110 Isolated TO-220converter, actuator driver.FEAT
8.9. 2sk310 2sk311.pdf Size:53K _hitachi
D4184 Mosfet Equivalent
8.10. 2sk3113.pdf Size:45K _kexin
SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3113FeaturesTO-252Unit: mmLow on-state resistance+0.15 +0.16.50-0.15 2.30-0.1RDS(on) =4.4 MAX. (VGS =10 V, ID =1.0 A)5.30+0.2 0.50+0.8-0.2 -0.7Low gate chargeQG = 9 nC TYP. (VDD =450 V, VGS =10 V, ID =2.0 A)0.127Gate voltage rating 30 V0.80+0.1 max-0.1Avalanche capability ratings+0.12.3 0.60-0.1 1G
8.11. 2sk3112.pdf Size:46K _kexin
SMD Type MOSFETMOS Field Effect Transistor2SK3112TO-263Unit: mmFeatures+0.24.57-0.2Gate voltage rating 30 V+0.11.27-0.1Low on-state resistanceRDS(on) = 110m MAX. (VGS =10 V, ID = 13A)Low input capacitance+0.10.1max1.27-0.1Ciss = 1600 pF TYP. (VDS =10V, VGS =0V)+0.1Avalanche capability rated 0.81-0.12.54Built-in gate protection diode1Gate+0.22.54-0
Другие MOSFET... 2SK2648-01, 2SK2674, 2SK1065, 2SK1358, 2SK2025-01, 2SK2043LS, 2SK3053, 2SK3102-01R, IRFP260M, 2SK2219, 2SK3850, 2SK2857, 2SJ306, 2SJ72, 2SJ670, 2SJ164, 2SJ598.
Mosfet D4184
Список транзисторов
Обновления
MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02D4184 Mosfet Module